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III-Nitride Materials

Properties, Growth, and Applications

Yangfeng Li Zeyu Liu Mingzeng Peng

$118.95   $95.03

Hardback

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English
Mdpi AG
25 September 2024
Ⅲ-nitride materials possess superior optical and electrical properties due to direct bandgap and polarization effects. Light-emitting devices are already common in daily lighting, traffic signage, landscape lighting, etc. Additionally, they hold promise for next-generation displays, e.g., microLED displays, as well as field effect transistors (FETs), for example, high electron mobility transistors (HEMTs) and p-channel FETs. The investigation of antipolar (N-polar) epitaxy and devices is also flourishing. The following Special Issue reprint gathers research achievements related to III-nitride materials and their associated devices, covering growth methods, device fabrication technology, structural design, and physical mechanisms of III-nitride semiconductors, devices, etc.
Guest editor:   , ,
Imprint:   Mdpi AG
Dimensions:   Height: 244mm,  Width: 170mm,  Spine: 11mm
Weight:   449g
ISBN:   9783725821075
ISBN 10:   3725821070
Pages:   114
Publication Date:  
Audience:   General/trade ,  ELT Advanced
Format:   Hardback
Publisher's Status:   Active

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