Rad-hard Semiconductor Memories

Cristiano Calligaro, Umberto Gatti

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English

River Publishers
30 September 2018

Electrical engineering; Electronic devices & materials; Environmental science, engineering & technology

Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.

In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).

After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include:

Radiation effects on semiconductor components (TID, SEE) Radiation Hardening by Design (RHBD) Techniques Rad-hard SRAMs Rad-hard PROMs Rad-hard Flash NVMs Rad-hard ReRAMs Rad-hard emerging technologies

By: Cristiano Calligaro, Umberto Gatti
Imprint: River Publishers
Country of Publication: Denmark
Dimensions: Height: 234mm, Width: 156mm,
Weight: 739g
ISBN: 9788770220200
ISBN 10: 8770220204
Pages: 416
Publication Date: 30 September 2018
Audience: Professional and scholarly , Undergraduate
Format: Hardback
Publisher's Status: Active

Cristiano Calligaro, Umberto Gatti

Reviews for Rad-hard Semiconductor Memories

Preface; Glossary; 1. Space radiation effects in Electronics; 2. RHBD techniques for memories; 3. Rad-hard SRAMs; 4. One-Time Programmable memories for harsh environments; 5. Rad-hard Flash Memories; 6. Radiation Hardness of Foundry NVM Technologies; 7. Rad-hard Resistive Memories; 8. Technologies for Rad-Hard Resistive Memories; 9. New generation of NVMs based on graphene related nanomaterials; Author Index; Keyword Index