Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Yue Hao (Xidian University, Xi'an, PR of China) Jin Feng Zhang (Xidian University, Xi'an, PR of China)

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao (Xidian University, Xi'an, PR of China), Jin Feng Zhang (Xidian University, Xi'an, PR of China), Jin Cheng Zhang (Xidian University, Xi'an, PR of China)

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English

CRC Press
30 June 2020

Semi-conductors & super-conductors

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

By: Yue Hao (Xidian University Xi'an PR of China), Jin Feng Zhang (Xidian University, Xi'an, PR of China), Jin Cheng Zhang (Xidian University, Xi'an, PR of China)
Imprint: CRC Press
Country of Publication: United Kingdom
Dimensions: Height: 254mm, Width: 178mm,
Weight: 771g
ISBN: 9780367574369
ISBN 10: 0367574365
Pages: 392
Publication Date: 30 June 2020
Audience: College/higher education , Professional and scholarly , Further / Higher Education , Undergraduate
Format: Paperback
Publisher's Status: Active

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.