Nanocrystals in Nonvolatile Memory

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Writam Banerjee (Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Bei-Tu-Cheng West Road, Beijing 100029, China)

Nanocrystals in Nonvolatile Memory

Writam Banerjee (Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Bei-Tu-Cheng West Road, Beijing 100029, China)

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English

Jenny Stanford Publishing
09 August 2024

Applied mathematics; Quantum physics (quantum mechanics & quantum field theory); Materials science; Electrical engineering; Electronics engineering

In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe.

The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.

By: Writam Banerjee (Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing 100029 China)
Imprint: Jenny Stanford Publishing
Country of Publication: Singapore
Edition: 2nd edition
Dimensions: Height: 229mm, Width: 152mm,
ISBN: 9789815129359
ISBN 10: 981512935X
Pages: 660
Publication Date: 09 August 2024
Audience: College/higher education , Professional and scholarly , Primary , Undergraduate
Format: Hardback
Publisher's Status: Forthcoming

Writam Banerjee is principal engineer of technology development for emerging nonvolatile memories at GlobalFoundries, Dresden, Germany. He earned his master's and doctorate degrees in physics and semiconductor devices, respectively. He worked at various academic positions for nearly 13 years in the area of emerging nonvolatile memory technology before joining GlobalFoundries in 2021. Dr. Banerjee has authored or co-authored over 100 scientific publications and is a senior member of IEEE and an editorial board member of Nature Portfolio journals.