GaN Transistor Modeling for RF and Power Electronics

By:   Yogesh Singh Chauhan (Professor Department of Electrical Engineering Indian Institute of Technology Kanpur India), Ahtisham Ul Haq Pampori (Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, United States), Sheikh Aamir Ahsan (Assistant Professor, Department of Electronics and Communication Engineering, National Institute of Technology, Srinagar, India), Raghvendra Dangi (Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India)
Imprint:   Woodhead Publishing
Country of Publication:   United States
Dimensions:   Height: 229mm,  Width: 152mm, 
Weight:   1.000kg
ISBN:   9780323998710
ISBN 10:   0323998712
Series:   Woodhead Publishing Series in Electronic and Optical Materials
Pages:   260
Publication Date:   07 June 2024
Audience:   Professional and scholarly ,  Undergraduate
Format:   Paperback
Publisher's Status:   Active

Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology in Kanpur, India. He is the developer of several industry standard SPICE models, including the ASM-HEMT model and the BSIM?BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4, and BSIM-SOI models. His research interests encompass the characterization, modeling, and simulation of semiconductor devices and RF circuit design. He is a Fellow of IEEE and the Indian National Academy of Engineering. He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the chairperson of the IEEE-EDS Compact Modeling Committee and IEEE Uttar Pradesh section. He has published more than 400 papers in international journals and conference proceedings. Ahtisham Ul Haq Pampori is a postdoctoral researcher at the Berkeley Device Modeling Center (BDMC), University of California, Berkeley. His research focuses on developing advanced semiconductor device models, particularly next-generation BSIM models for field-effect transistors. He earned his doctorate from the Indian Institute of Technology Kanpur, with a focus on GaN HEMT RF device characterization and modeling. A recipient of the Prime Minister’s Research Fellowship, Ahtisham has extensive industry experience collaborating on GaN HEMT characterization and modeling. Prior to academia, he was an Associate Consultant at Frost & Sullivan, specializing in Cloud and Big Data. Sheikh Aamir Ahsan possesses expertise in state-of-the-art RF and power GaN SPICE models. Originating from the development of the ASM GaN model during his doctoral studies at IIT Kanpur, presently serving as an Assistant Professor at the National Institute of Technology Srinagar (NITSRI), his team leads the advancement of power GaN technology through modeling and design enablement frameworks. Acting as a consultant for multiple industrial partners, his impact extends beyond academia, as his GaN research seamlessly integrates into commercial SPICE simulators, influencing the trajectory of GaN product development and application globally. He was awarded the Startup Research Grant in 2019 by the Science and Engineering Research Board, India.